LH52D1000 ram equivalent, cmos 1m (128k x 8) static ram.
* Access time: 85 ns (MAX.), 100 ns (MAX.)
* Current consumption: Operating: 40 mA (MAX.) 6 mA (MAX.) (tRC, tWC = 1 µs) Standby: 45 µA (MAX.)
* Data Retention.
The LH52D1000 is a static RAM organized as 131,072 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.
A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4
CMOS 1M (128K × 8) Static Ram
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